The Nordiko 2000 Sputtering System offers the highest degree of process flexibility in the industry. The Nordiko 2000 systems are batch type annular geometry's with modular options allowing a wide range of operating parameters and configurations


The chamber lid or baseplate can accommodate up to four (4) 8" diameter (six (6) 8" or four (4) 10" diameter in 8550) sputtering cathodes for either up or down deposition. Sputter-up is recommended for system cleanliness and particle control. Sputter-down is beneficial for hard to fixture irregular substrates and for edge coverage requirements.

 

All segments may be configured identically, for a dedicated process yielding higher substrate throughputs. A dedicated substrate holder may also be provided in lieu of a segmented type to further increase the load sizes for pilot/production applicability.

For further process flexibility the entire substrate table may be raised or lowered through a range of 4" (l00mm), even in mid-process. This allows for optimization of deposition rate versus uniformity to be undertaken with ease. Additionally, thick or 3-dimensional substrates may be accommodated without system modification.



The Nordiko 2000 is designed primarily for R&D (Advanced Process Development) and Pilot Production applications. The "base" Nordiko 2000 can be configured without an automation system or load lock for restricted budgets. These items can be modularly added on as the application and funds develop.

  • 24.5" (600mm) diameter stainless steel substrate table.
  • Up or down sputtering geometry's.
  • Four sputtering electrodes; 2", 3", 4", 6", and 8" diameter (50mm, 75mm, 1 00mm, 1 50mm, and 200mm diameter) planar target electrodes.
  • Sequential or co-deposition sputtering modes.
  • Target electrodes are arranged in the same plane as standard, but cluster-focused or off-axis geometry's are available
  • Source to substrate distance may be varied during process.
  • Work holder may be dedicated to a full load of wafers, or segmented to allow for a variety of process options.
  • Work holder may be used in static or rotational operation.
  • Substrate heat to 350ºC, 550ºC or 850ºC.
  • Substrate cooling via water-cooled or gas injected work holder with auto clamping.
  • High power RF bias with excellent power transfer stability during rotation.
  • RF etch capability.
  • Ion Beam "soft etch" using Nordiko's patented RF excited filamentless ion beam gun.
  • Automated load lock (optional on 2000).
  • Process control automation system (optional on 2000).
  • AII mechanized set-points are stored in software for easy adjustment from key board (optional on 2000).
  • Installation through clean room wall or free standing.
  • All servicing from rear of machine.
  • Small foot print.

Control of pumpdown, valving, wafer transfer, and deposition is provided by a Model 5TI Process Controller. This Controller is simple, reliable, and also has a manual control feature to facilitate maintenance and enable the performance of special processes requiring manual control.


Copyright 2003 - Control Process Apparatus, Inc.  sales@sputteringneeds.com

Company  |  Systems  |  Parts  |  Services  |  Contact Us