4400 Series of RF Plasma systems for sputtering and etching
reflect an advanced design concept based on a high capacity
load lock that permits wafer loading without breaking vacuum
in the process chamber.
Created specifically for the production environment, this Ultek
design provides you with significant advantages whenever you
must combine quality with high yield and high throughput. The
means to handle almost any thin film coating or etching requirement
you may have is provided by a broad range of operating modes.
These include- DC magnetron, RF magnetron and RF diode sputter
deposit, bias sputter, reactive sputter, sputter etch, plasma
etch and reactive ion etch.
Quick turnaround is achieved on your batch loads by a fast cycle
load lock, a closed loop helium cryopump and a full flood Meissner
trap. Aluminum alloy deposition rates as high as 2000 Å
is possible with Delta target systems, resulting in production
rates exceeding 150 three-inch wafers an hour.
rotating substrate table for multi-pass deposition ensures you
high-uniformity films and run-to-run repeatability. The mechanical
design specifically minimizes generation of particles that could
cause pinhole defects. Wafer breakage is reduced by easy loading
pallet designs. Reproducible high quality films are guaranteed
through the routine achievement of clean vacuum conditions.
Total control of critical film characteristics
Series systems will yield you excellent films with aluminum,
aluminum alloys, platinum silicide, titanium-tungsten, nichrome-gold,
silicon nitride, silicon dioxide, chrome disilicide and permalloy.
coverage: Vertical to horizontal can approach 70% and is typically
better than 50% even with high or undercut steps.
Reflectivity as a measure of specularity is at least 60% and
can be as good as 80%.
Resistivity: Bulk resistivity is essentially achievable for
AI and Al-alloy films with typical values ranging from 2.8 to
2.9 µO cm.
Hardness values lower than 100 (Knoop) are routinely achievable
with short anneal times, minimizing the risk of bond failure.
Maximum process control
considerable choice of target materials, machine operating modes,
pressure and gas controls, cathode configurations and power
levels are available in the 4400 Series. They give you an unprecedented
capacity to perform a wide variety of thin film tasks.